IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 1997;5(4):369-376. doi: 10.1109/92.645063 Q23.22025
Intrinsic MOSFET parameter fluctuations due to random dopant placement
DOI: 10.1109/92.645063
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IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 1997;5(4):369-376. doi: 10.1109/92.645063 Q23.22025
DOI: 10.1109/92.645063
摘要 查看摘要