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IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 1997;5(4):369-376. doi: 10.1109/92.645063 Q23.22025

Intrinsic MOSFET parameter fluctuations due to random dopant placement

Xinghai Tang, ; De, V.K.; Meindl, J.D.

DOI: 10.1109/92.645063

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期刊名:Ieee transactions on very large scale integration (vlsi) systems

缩写:IEEE T VLSI SYST

ISSN:1063-8210

e-ISSN:1557-9999

IF/分区:3.2/Q2

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Intrinsic MOSFET parameter fluctuations due to random dopant placement