首页 正文

IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 2014;22(5):1187-1191. doi: 10.1109/TVLSI.2013.2265894 Q23.22025

Built-In Binary Code Inversion Technique for On-Chip Flash Memory Sense Amplifier With Reduced Read Current Consumption

用于片上闪存感应放大器的内置二进制码反转技术,可降低读取电流功耗

Daejin Park, ; Tag Gon Kim,

DOI: 10.1109/TVLSI.2013.2265894

摘要 查看摘要

Copyright © IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 中文内容为AI机器翻译,仅供参考!

期刊名:Ieee transactions on very large scale integration (vlsi) systems

缩写:IEEE T VLSI SYST

ISSN:1063-8210

e-ISSN:1557-9999

IF/分区:3.2/Q2

文章目录 更多期刊信息

全文链接
引文链接
复制
已复制!
推荐内容
Built-In Binary Code Inversion Technique for On-Chip Flash Memory Sense Amplifier With Reduced Read Current Consumption