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Ieee transactions on very large scale integration (vlsi) systems. 2012;20(1):0-41. doi: 10.1109/tvlsi.2010.2093938 Q23.22025

Postsilicon Tuning of Standby Supply Voltage in SRAMs to Reduce Yield Losses Due to Parametric Data-Retention Failures

Nourivand, A.; Al-Khalili, A.J.; Savaria, Y.

DOI: 10.1109/tvlsi.2010.2093938

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期刊名:Ieee transactions on very large scale integration (vlsi) systems

缩写:IEEE T VLSI SYST

ISSN:1063-8210

e-ISSN:1557-9999

IF/分区:3.2/Q2

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Postsilicon Tuning of Standby Supply Voltage in SRAMs to Reduce Yield Losses Due to Parametric Data-Retention Failures