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Chinese Physics Letters. 2004;21(2):414-417. doi: 10.1088/0256-307X/21/2/056 Q14.22025

Analysis and Optimal Design of a Novel SiGe/Si Power Diode for Fast and Soft Recovery

Yong, Gao; Li, Ma

DOI: 10.1088/0256-307X/21/2/056

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Copyright © Chinese Physics Letters. 中文内容为AI机器翻译,仅供参考!

期刊名:Chinese physics letters

缩写:CHINESE PHYS LETT

ISSN:0256-307X

e-ISSN:1741-3540

IF/分区:4.2/Q1

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Analysis and Optimal Design of a Novel SiGe/Si Power Diode for Fast and Soft Recovery