Quality and reliability engineering international. 1993;9(4):341-346. doi: 10.1002/qre.4680090418 Q22.82025

Reliability issues of offset drain transistors after different modes of electrical stress

C. Papadas; P. Mortini; C. Monsérié; G. Ghibaudo; G. Pananakakis

DOI: 10.1002/qre.4680090418

摘要

期刊名：Quality and reliability engineering international

缩写：QUAL RELIAB ENG INT

ISSN：0748-8017

e-ISSN：1099-1638

IF/分区：2.8/Q2

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