Quality and reliability engineering international. 1993;9(4):337-340. doi: 10.1002/qre.4680090417 Q22.82025

Two-dimensional modelling and characterization of gate-to-drain overlap contribution on the leakage current of a MOSFET, used as a GCD

E. Ciantar; S. Burgniard; R. Jérisian; J. Oualid

DOI: 10.1002/qre.4680090417

摘要

期刊名：Quality and reliability engineering international

缩写：QUAL RELIAB ENG INT

ISSN：0748-8017

e-ISSN：1099-1638

IF/分区：2.8/Q2

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