Crystallography reports. 2002;47(3):514-518. doi: 10.1134/1.1481944 Q40.52025
General orientational characteristics of heteroepitaxial layers of AIIBVIsemiconductors on sapphire and semiconductor substrates with diamond and sphalerite structures (AIIIBV)
蓝宝石衬底上以及具有金刚石和闪锌矿结构的半导体衬底上，AIIIBVI型半导体异质外延层的一般取向特征
DOI: 10.1134/1.1481944
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期刊名：Crystallography reports
缩写：CRYSTALLOGR REP+
ISSN：1063-7745
e-ISSN：1562-689X
IF/分区：0.5/Q4
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General orientational characteristics of heteroepitaxial layers of AIIBVIsemiconductors on sapphire and semiconductor substrates with diamond and sphalerite structures (AIIIBV)