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Journal of nondestructive evaluation. 2009;28(3-4):125-130. doi: 10.1007/s10921-009-0054-8 Q22.42025

Structural Properties of Doped GaN on Si(111) Studied by X-Ray Diffraction Techniques

X射线衍射技术研究Si(111)上掺杂GaN的结构特性

L. S. Chuah; Z. Hassan; S. S. Ng; H. Abu Hassan

DOI: 10.1007/s10921-009-0054-8

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期刊名:Journal of nondestructive evaluation

缩写:J NONDESTRUCT EVAL

ISSN:0195-9298

e-ISSN:1573-4862

IF/分区:2.4/Q2

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Structural Properties of Doped GaN on Si(111) Studied by X-Ray Diffraction Techniques