Journal of materials science-materials in electronics. 2012;23(2):376-383. doi: 10.1007/s10854-011-0420-z Q23.22025

Effect of annealing temperature on the microstructural and electrical properties of epitaxial Ga-doped ZnO film deposited on c-sapphire substrate

退火温度对沉积在c-蓝宝石衬底上的外延Ga掺杂ZnO薄膜微观结构和电学性能的影响

Zhiyun Zhang; Chonggao Bao; Qun Li; Shengqiang Ma; Shuzeng Hou

DOI: 10.1007/s10854-011-0420-z

期刊名：Journal of materials science-materials in electronics

缩写：J MATER SCI-MATER EL

ISSN：0957-4522

e-ISSN：1573-482X

IF/分区：3.2/Q2

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