Journal of materials science-materials in electronics. 2011;22(12):1816-1826. doi: 10.1007/s10854-011-0368-z Q23.22025

Effects of post-deposition annealing temperature and ambient on RF magnetron sputtered Sm2O3gate on n-type silicon substrate

退火温度和环境对射频磁控溅射Sm2O3栅极在n型硅衬底上沉积后的影响

Wen Chiao Chin; Kuan Yew Cheong

DOI: 10.1007/s10854-011-0368-z

期刊名：Journal of materials science-materials in electronics

缩写：J MATER SCI-MATER EL

ISSN：0957-4522

e-ISSN：1573-482X

IF/分区：3.2/Q2

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