Journal of materials science-materials in electronics. 2006;17(10):847-850. doi: 10.1007/s10854-006-0033-0 Q23.22025

The properties of AlGaN films and AlGaN/GaN heterostructures grown on ((11ar{2}0)) sapphire substrates

在（11ar{2}0）蓝宝石衬底上生长的AlGaN薄膜及AlGaN/GaN异质结构的特性

Wei-Tsai Liao; Jyh-Rong Gong; Shih-Wei Lin; Cheng-Liang Wang; Keh-Chang Chen; Jen-Bin Shi; Sheng-Yueh Chang; Kuan-Jiuh Lin

DOI: 10.1007/s10854-006-0033-0

期刊名：Journal of materials science-materials in electronics

缩写：J MATER SCI-MATER EL

ISSN：0957-4522

e-ISSN：1573-482X

IF/分区：3.2/Q2

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