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Journal of materials science-materials in electronics. 1991;2(4):230-235. doi: 10.1007/bf00702928 Q23.22025

Noise associated with reverse anneal phenomenon in high current arsenic-implanted silicon

高电流砷注入硅中反向退火现象相关的噪声

D. M. Liou; J. Gong; C. Y. H. Tsai

DOI: 10.1007/bf00702928

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期刊名:Journal of materials science-materials in electronics

缩写:J MATER SCI-MATER EL

ISSN:0957-4522

e-ISSN:1573-482X

IF/分区:3.2/Q2

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Noise associated with reverse anneal phenomenon in high current arsenic-implanted silicon