International journal of rf and microwave computer-aided engineering. 1995;5(3):173-194. doi: 10.1002/mmce.4570050306 Q41.02025
Modeling of dispersive microwave FET devices using a quasi-static approach
DOI: 10.1002/mmce.4570050306
摘要
International journal of rf and microwave computer-aided engineering. 1995;5(3):173-194. doi: 10.1002/mmce.4570050306 Q41.02025
DOI: 10.1002/mmce.4570050306
摘要