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International journal of rf and microwave computer-aided engineering. 2005;15(5):412-422. doi: 10.1002/mmce.20110 Q41.02025

A 3-V variable-gain amplifier in Si/SiGe BiCMOS technology for 5-GHz WLAN applications

F. Alimenti; V. Palazzari; L. Roselli; A. Scorzoni

DOI: 10.1002/mmce.20110

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期刊名:International journal of rf and microwave computer-aided engineering

缩写:INT J RF MICROW C E

ISSN:1096-4290

e-ISSN:1099-047X

IF/分区:1.0/Q4

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A 3-V variable-gain amplifier in Si/SiGe BiCMOS technology for 5-GHz WLAN applications