International journal of rf and microwave computer-aided engineering. 2002;12(5):428-438. doi: 10.1002/mmce.10045 Q41.02025
Deep-submicron drain current to radio frequency silicon on insulator metal oxide semiconductor field-effect transistor macromodel for designing microwave circuits
DOI: 10.1002/mmce.10045
摘要
期刊名：International journal of rf and microwave computer-aided engineering
缩写：INT J RF MICROW C E
ISSN：1096-4290
e-ISSN：1099-047X
IF/分区：1.0/Q4
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Deep-submicron drain current to radio frequency silicon on insulator metal oxide semiconductor field-effect transistor macromodel for designing microwave circuits