International journal of numerical modelling-electronic networks devices and fields. 1992;5(1):53-66. doi: 10.1002/jnm.1660050107 Q21.72025
Hydrodynamic simulation of electron heating in conventional and lightly-doped-drain MOSFETs with application to substrate current calculation
DOI: 10.1002/jnm.1660050107
摘要
期刊名:International journal of numerical modelling-electronic networks devices and fields
缩写:INT J NUMER MODEL EL
ISSN:0894-3370
e-ISSN:1099-1204
IF/分区:1.7/Q2
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Hydrodynamic simulation of electron heating in conventional and lightly-doped-drain MOSFETs with application to substrate current calculation
