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International journal of numerical modelling-electronic networks devices and fields. 1992;5(1):53-66. doi: 10.1002/jnm.1660050107 Q21.72025

Hydrodynamic simulation of electron heating in conventional and lightly-doped-drain MOSFETs with application to substrate current calculation

Kam-Wing Chai; P. A. Mawby; A. McCowen

DOI: 10.1002/jnm.1660050107

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期刊名:International journal of numerical modelling-electronic networks devices and fields

缩写:INT J NUMER MODEL EL

ISSN:0894-3370

e-ISSN:1099-1204

IF/分区:1.7/Q2

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Hydrodynamic simulation of electron heating in conventional and lightly-doped-drain MOSFETs with application to substrate current calculation