Lattice-Mismatched van der Waals Epitaxy and Photoluminescence of Two-Dimensional Ga x In1- x Se Alloys on Si(111)
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Ga x In1-x Se (GIS) alloys are two-dimensional (2D) layered materials with band gaps and lattice parameters of interest for many energy and electronic applications. They can be fabricated using van der Waals epitaxy, which is an emerging technique that offers ... ...
