The Influence of Gap Angle on the Transport Characteristics of Split-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
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In this work, split-gate (SG) AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gap angles were fabricated. The effect of the gap angle on the transport characteristics of these SG devices was investigated via measurement and analysis o... ...
