Time-Domain Simulation and Optimization of the Memory Window for HZO-Based FeFETs Using the NLS Model
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Hafnium-zirconium oxide (HZO)-based ferroelectric field-effect transistors (FeFETs) are expected to become core devices for new embedded memory and compute-in-memory systems. However, existing simulations rely on finite-element-based TCAD tools, which are comp... ...
