Single and Repetitive Surge Reliability of 1200 V Asymmetric Trench SiC MOSFETs Under Various Gate Biases
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The parameter degradation and failure mechanisms of 1200 V asymmetric trench-type (AT) silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) under various single and repetitive surge currents, with various gate bias voltages (VGS) ... ...
