Nano-scale Al redistribution at grain boundaries governs growth morphology in β-(AlxGa1-x)2O3 on sapphire substrate via MOCVD
{{output}}
Ultra-wide-bandgap β-Ga2O3 is a promising platform for next-generation deep-UV optoelectronics and high-power electronics. Here, we report controlled growth of β-(AlxGa1-x)2O3 epilayers on sapphire by metalorganic chemical vapor deposition with tunable trime... ...
