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Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge0.85Sn0.15 on Ge(001)

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Germanium-tin (GeSn) alloys are emerging as promising materials for mid-infrared optoelectronics and silicon-compatible photonic devices, owing to their tunable direct bandgap. However, the growth of high-quality GeSn films with high Sn content remains challen... ...