Ferroelectricity from Spontaneous Symmetry Breaking in Amorphous BN-Based Thin Films Grown via Atomic Layer Annealing
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Boron nitride (BN) thin film growth typically requires high temperatures (>600 °C), which limits integration with patterned Si-based electronic devices. In this work, we demonstrate that atomic layer annealing (ALA) enables the growth of amorphous BN thin fil... ...
