Single-Crystalline High-Quality β‑Ga2O3 Pseudosubstrate on Sapphire through Sputtering for Epitaxial Deposition
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Solid-phase epitaxy (SPE) of β-Ga2O3 thin films by radio frequency (RF) sputtering, followed by crystallization through high-temperature postdeposition annealing, is employed on sapphire substrates, yielding a high-quality pseudosubstrate for subsequent buffe... ...
