Interfacial Charge Transfer Governs Bias-Polarity-Selective Electroluminescence in van der Waals Tunneling Heterostructures
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Inelastic electron tunneling (IET) provides an efficient route for electroluminescence (EL) in van der Waals (vdW) heterostructures, yet the microscopic origin of its bias-polarity dependence remains elusive due to structural asymmetry in prior devices. Here, ... ...
