Interface-Engineered, Low-Damage IGZO/HfO2 Charge-Trapping Memory Devices Fabricated Using a Remote Plasma ALD Process
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In this study, charge-trapping memory (CTM) transistors were developed using indium gallium zinc oxide (IGZO) as the oxide semiconductor channel and high-k HfO2 as the charge-trapping layer, aiming for next-generation nonvolatile memory applications. To evalua... ...
