Accurate Prediction of Optical Transitions in Epitaxial InGaAs/InAlAs Asymmetric Coupled Quantum-Well Structures
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Atomically resolved Z-contrast and strain mappings are used to extract a model of the composition of an InGaAs/InAlAs asymmetric coupled quantum-well structure grown on InP by using metal-organic vapor phase epitaxy. The model accounts for grading across multi... ...
