Onset of in-plane ferroelectricity in the vanadium dioxide (VO2) Mott insulator for inmemory computing applications
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We present experimental results on VO2, which is the most utilized Mott material, grown by atomic layer deposition on single-crystalline Si (100) (VO2/Si) wafers and followed by thermal treatment at 500 o C for different times: 30, 60 and 90 minutes. All these... ...
