Mitigating Plasma Etch-Induced Negative Charge Trapping in 2.7 kV β‑Ga2O3 (001) Trench Schottky Barrier Diodes Using H3PO4 Treatment
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Stable β-Ga2O3 (001) trench Schottky barrier diodes (TSBDs) with a Baliga's figure-of-merit (BFOM) of 0.7 GW cm-2 were demonstrated by reducing the Al2O3/Ga2O3 interface state trap density using a H3PO4 surface treatment during device fabrication. TSBDs with... ...
