ALD-Derived WO3- x Leads to Nearly Wake-Up-Free Ferroelectric Hf0.5Zr0.5O2 at Elevated Temperatures
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Breaking the memory wall in advanced computing architectures will require complex 3D integration of emerging memory materials such as ferroelectricseither within the back-end-of-line (BEOL) of CMOS front-end processes or through advanced 3D packaging technol... ...
