Ultrahigh Dielectric Permittivity in Ultrathin 2D β-Ga2O3 for Advanced Dielectric Applications
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The continuous scaling of semiconductor devices necessitates the integration of high-permittivity (high-k) dielectrics to maintain gate control and reduce power consumption. Here, we report an ultrahigh dielectric constant (k) of ∼150 in ultrathin (10 nm) β-... ...
