Unraveling In-Plane Crystallographic Anisotropy-Dependent Memory Performance In Van Der Waals α-In2Se3 Ferroelectric Semiconductor Field-Effect Transistors
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The ferroelectric semiconductor field-effect transistors (FeS-FETs) based on α-In2Se3 emerge as promising non-volatile memory devices. However, the intrinsic in-plane (IP) crystallographic anisotropy of α-In2Se3 introduces orientation dependence, leading to ... ...
