Optical phonon confinement significantly lowers the hot electron energy loss rate in III-nitride (InN, GaN, and AlN) and GaAs nanoscale structures
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This investigation presents a detailed comparative analysis of the energy loss rate (ELR) in the III-nitride (InN, AlN, and GaN) and GaAs quantum well (QW) heterostructures of hot electrons because of confined and bulk optical phonon (OP) scattering based on t... ...
