Study of Local Band Bending in n-Channel In2O3 Thin-Film Transistors under Gate and Drain Voltage Stress Using Operando Hard X-ray Photoelectron Spectroscopy
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In this study, we analyze In2O3 thin-film transistors (In2O3-TFT) using synchrotron-based hard X-ray photoelectron spectroscopy (HAXPES) in operando conditions. A bottom-gate In2O3-TFT with a high-k Al2O3 gate dielectric, grown on thermally oxidized silicon (S... ...
