Enhancement of On-Current and Reliability in InGaZnO Thin-Film Transistors for Synaptic Circuit Applications through Gate Insulator Stack Engineering
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A nanometer-scale multilayer gate insulator (GI) engineering strategy is introduced to simultaneously enhance the on-current and bias stability of amorphous InGaZnO thin-film transistors (a-IGZO TFTs). Atomic layer deposition supercycle modifications employ al... ...
