Role of induced-strain and interlayer coupling in contact resistance of VS2-BGaX2 (X = S, Se) van der Waals heterostructures
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Using Density Functional Theory (DFT) calculations, we explored the electronic band structure and contact type (Schottky and Ohmic) at the interface of VS2-BGaX2 (X = S, Se) metal-semiconductor (MS) van der Waals heterostructures (vdWHs). The thermal and dynam... ...
