Atomic Layer Deposition of ZrO2 Films at High Temperatures (>350 °C) Using a Modified Cyclopentadienyl Zr Precursor
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With tris(dimethylamino)cyclopentadienyl metal (CpX(NMe2)3) precursors, the optimum process temperature of atomic layer deposition (ALD) is higher for HfO2 films (∼350 °C) than ZrO2 films (∼320 °C). Since simultaneous ALD of the two films is required in Hf... ...
