Heteroepitaxial Growth of α‑Ga2O3 by MOCVD on a‑, m‑, r‑, and c‑Planes of Sapphire
{{output}}
Ga2O3 thin films were deposited simultaneously on (112̅0) a-plane, (101̅0) m-plane, (0001) c-plane, and (011̅2) r-plane sapphire substrates using metal-organic chemical vapor deposition (MOCVD) and characterized by X-ray diffraction (XRD) and atomic force m... ...
