Region-Selective Oxygen Vacancy Engineering for Ferroelectric Hf0.5Zr0.5O2 Thin Films Processed at 300 °C
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The discovery of ferroelectricity in hafnium oxide (HfO2) thin films has positioned it as a leading material for next-generation nonvolatile memory. However, the integration of HfO2-based ferroelectric thin films into back-end-of-line (BEOL) processes remains ... ...
