Defect Chemistry Engineered SnO2 Thin Films via Thermal ALD: Unraveling Defect-Controlled Electronic Structure for Charge Transport
{{output}}
Atomic layer deposition (ALD) was utilized to fabricate SnO2 thin films using tetrakis(dimethylamino)tin (TDMASn) and H2O over a temperature range of 50-200 °C, with the goal of elucidating the interplay between growth temperature, defect chemistry, and elect... ...
