A Study on the Synaptic Behavior of Al/ZrO2/TiO2/Al Electronic Bipolar Resistance Switching Memristor
{{output}}
This study presents the Al/ZrO2/TiO2/Al (AZTA) memristor, a device based on a nonfilamentary mechanism. It is designed to simulate artificial synapses for both artificial neural networks and spiking neural networks. The AZTA device exhibits highly linear and s... ...
