Long-Term Sustainability of High-Mobility Ultrathin a-IGZO TFT with Double-Layered Passivation
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The development of ultrathin amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) technology, capable of delivering high mobility and robust device reliability, is essential for next-generation oxide-TFT applications such as 3D monolithic hi... ...
