Outperforming Transparent Ultraviolet Photodetectors Based on the AlGaN/GaN High Electron Mobility Transistor on SiC
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The AlGaN/GaN high electron mobility transistor (HEMT) epi-structure on SiC has excellent promise for developing industrially viable transparent ultraviolet (UV) photodetectors (PDs) that outperform current transparent PDs. They offer very high responsivity wh... ...
