Gallium nitride multichannel devices with latch-induced sub-60-mV-per-decade subthreshold slopes for radiofrequency applications
{{output}}
Aluminium gallium nitride/gallium nitride (AlGaN/GaN)-based superlattice castellated field-effect transistors are a potential basis for high-power radiofrequency amplifiers and switches in future radars. The reliability of such devices, however, is not well un... ...
