Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics
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In this study, a novel silicon carbide (SiC) double-trench MOSFET (DT-MOS) combined Schottky barrier diode (SBD) and MOS-channel diode (MCD) is proposed and investigated using TCAD simulations. The integrated MCD helps inactivate the parasitic body diode when ... ...
