Impact of the Ge-Si interfacial barrier on the temperature-dependent performance of PureGaB Ge-on-Si p + n photodiodes
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A temperature-dependent study of the near-infrared (NIR) responsivity of Ge-on-Si photodiodes is presented. The diodes, formed as n-Ge islands within oxide windows on n-Si and capped with Ga and B layers (PureGaB), exhibit low dark current of ∼2 × 10-13 A/µ... ...
