ACS applied materials & interfaces. 2025 Jun 13. doi: 10.1021/acsami.5c06881 Q18.22025
Achieving Improved Buried Interface Enabled by Oriented Bridging Molecules in Near-Infrared Perovskite Light-Emitting Diodes
取向桥接分子实现高性能近红外钙钛矿发光二极管中的优异界面性能 翻译改进
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DOI: 10.1021/acsami.5c06881 PMID: 40512592
摘要 中英对照阅读
金属卤化物钙钛矿在固态照明和平板显示技术领域展现出巨大的应用前景。尽管已经取得了显著的进展,但目前实现高性能钙钛矿发光二极管(PeLEDs)的主要策略仍然主要集中在添加剂工程和上层界面修改方面,而对埋藏界面的关注较少,埋藏界面对于钙钛矿晶体生长和电荷传输起着至关重要的作用。在这里,我们展示了一种新颖的埋藏界面修饰策略,通过将聚乙二醇化聚乙烯亚胺(PEIE)替换为磷酸乙醇胺(PEA)。PEA作为ZnO与钙钛矿之间的桥接分子,其磷酸基团锚定在ZnO上,氨基则充当钙钛矿成核位点并钝化钙钛矿缺陷。此外,PEA还能钝化ZnO的表面缺陷,并调节其能级,从而增强电子注入。由此制备的PeLEDs表现出高达22.3%的峰值EQE,效率滚降减小且半衰期延长,在798 nm的峰值波长下优于传统的PeLEDs。
关键词:缺陷钝化;界面修饰;钙钛矿;磷酸乙醇胺;自组装单分子层。
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