Unveiling the Effects of Hydroxyl-Induced Trap States on the Charge Transport in p- and n-Channel Organic Field-Effect Transistors through Variable-Temperature Characterization
{{output}}
Trap states at the gate dielectric-organic semiconductor (OSC) interface are one of the main sources of extrinsic traps in organic field-effect transistors (OFETs). However, they are often overlooked and their effects on the charge transport are attributed to ... ...
