Interfacial Chemical and Electrical Performance Study and Thermal Annealing Refinement for AlTiO/4H-SiC MOS Capacitors
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The gate reliability issues in SiC-based devices with a gate dielectric formed through heat oxidation are important factors limiting their application in power devices. Aluminum oxide (Al2O3) and titanium dioxide (TiO2) were combined using the ALD process to f... ...
