Nanomaterials (Basel, Switzerland). 2025 May 27;15(11):805. doi: 10.3390/nano15110805 Q24.42024

Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET

基于1200V 4H-SIC MOSFET的终端耐雪崩设计研究与分析翻译改进

Mengyuan Yu^{1 2}, Yi Shen^{1 2}, Hongping Ma^{1 2 3}, Qingchun Zhang^{1 2 3}

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作者单位

¹ Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China.

² Shanghai Research Center for Silicon Carbide Power Devices Engineering & Technology, Fudan University, Shanghai 200433, China.

³ Institute of Wide Bandgap Semiconductor Materials and Devices, Research Institute of Fudan University in Ningbo, Ningbo 315327, China.

DOI: 10.3390/nano15110805 PMID: 40497854

摘要中英对照阅读

This study investigates the degradation mechanisms of 1200 V SiC MOSFETs during High-temperature Reverse Bias (HTRB) reliability testing, focusing on breakdown voltage (BV) reduction. Experimental results reveal that trapped charges at the SiC/SiO₂ interface in the termination region alter electric field distribution, leading to premature breakdown. To address this issue, an optimized termination structure is proposed, incorporating reduced spacing between adjacent field rings and additional outer rings. TCAD simulations and experimental validation demonstrate that the improved design stabilizes BV within 2% deviation during 1000 h HTRB testing, which significantly enhances termination robustness.

Keywords: SiC MOSFET; breakdown voltage; termination.

Keywords：termination robustness; 4h-sic mosfet

这项研究调查了1200 V碳化硅（SiC）MOSFET在高温反向偏置（HTRB）可靠性测试期间的降解机制，重点关注击穿电压（BV）下降的原因。实验结果表明，在终止区域的SiC/SiO₂界面处积累的电荷改变了电场分布，导致了提前击穿。为了解决这一问题，提出了一个优化的终止结构，包括相邻场环之间的间距减小以及增加外层环。借助TCAD仿真和实验验证证明，改进后的设计在1000小时HTRB测试中使击穿电压稳定在2%以内偏差范围内，这显著增强了终止区域的可靠性。

关键词：SiC MOSFET；击穿电压；终止结构。

关键词：终止鲁棒性; 4H-SiC MOSFET

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期刊名：Nanomaterials

缩写：NANOMATERIALS-BASEL

ISSN：2079-4991

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IF/分区：4.4/Q2

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Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET

基于1200V 4H-SIC MOSFET的终端耐雪崩设计研究与分析翻译改进

4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses

基于脉冲高温反偏和负栅偏置应力的4H-SiC MOSFET阈值电压不稳定性研究

A High-Density 4H-SiC MOSFET Based on a Buried Field Limiting Ring with Low Qgd and Ron

一种低Qgd和Ron的埋置场限环高密度4H-SiC MOSFET

Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET

基于1200V 4H-SIC MOSFET的终端耐雪崩设计研究与分析 翻译改进

4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses

基于脉冲高温反偏和负栅偏置应力的4H-SiC MOSFET阈值电压不稳定性研究

A High-Density 4H-SiC MOSFET Based on a Buried Field Limiting Ring with Low Qgd and Ron

一种低Qgd和Ron的埋置场限环高密度4H-SiC MOSFET

基于1200V 4H-SIC MOSFET的终端耐雪崩设计研究与分析翻译改进